TY - JOUR
T1 - A possible oriented attachment growth mechanism for silver nanowire formation
AU - Murph, Simona E.Hunyadi
AU - Murphy, Catherine J.
AU - Leach, Austin
AU - Gall, Kenneth
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - Electron microscopy studies suggest that silver nanowires prepared by an approach reported earlier by us (Caswell, K. K., Bender, C. M., Murphy, C. J. Nano Lett., 2003, 3, 667-669) form through a coarsening process via an oriented attachment mechanism. Initially, silver nucleation centers were produced by chemical reduction of silver ions in boiling water, with sodium citrate and sodium hydroxide as additives in solution. These nucleation centers, with a twinned crystallographic orientation, ultimately merge into fully grown silver nanowires. This is a completely different mechanism from the seed-mediated growth approach, which has also been used to produce silver nanowires. Companion molecular dynamics performed with the embedded atom method are in agreement with our experimental data.
AB - Electron microscopy studies suggest that silver nanowires prepared by an approach reported earlier by us (Caswell, K. K., Bender, C. M., Murphy, C. J. Nano Lett., 2003, 3, 667-669) form through a coarsening process via an oriented attachment mechanism. Initially, silver nucleation centers were produced by chemical reduction of silver ions in boiling water, with sodium citrate and sodium hydroxide as additives in solution. These nucleation centers, with a twinned crystallographic orientation, ultimately merge into fully grown silver nanowires. This is a completely different mechanism from the seed-mediated growth approach, which has also been used to produce silver nanowires. Companion molecular dynamics performed with the embedded atom method are in agreement with our experimental data.
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U2 - 10.1021/acs.cgd.5b00123
DO - 10.1021/acs.cgd.5b00123
M3 - Article
AN - SCOPUS:84926304670
SN - 1528-7483
VL - 15
SP - 1968
EP - 1974
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 4
ER -