Abstract
By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba 2Cu3O7-x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3-GaAs and the Al 2O3-Y1Ba2Cu3O 7-x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730°C.
Original language | English (US) |
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Pages (from-to) | 2704-2706 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 58 |
Issue number | 23 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)