Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

M. A. Reshchikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag

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Abstract

The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90 was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn Ga acceptors and free electrons were also estimated from the photoluminescence measurements.

Original languageEnglish (US)
Article number073106
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
StatePublished - Apr 1 2012

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quantum efficiency
photoluminescence
free electrons
continuous radiation
zinc
luminescence
optical properties
silicon
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reshchikov, M. A., Foussekis, M., McNamara, J. D., Behrends, A., Bakin, A., & Waag, A. (2012). Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn. Journal of Applied Physics, 111(7), [073106]. https://doi.org/10.1063/1.3699312

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn. / Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

In: Journal of Applied Physics, Vol. 111, No. 7, 073106, 01.04.2012.

Research output: Contribution to journalArticle

Reshchikov, MA, Foussekis, M, McNamara, JD, Behrends, A, Bakin, A & Waag, A 2012, 'Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn', Journal of Applied Physics, vol. 111, no. 7, 073106. https://doi.org/10.1063/1.3699312
Reshchikov, M. A. ; Foussekis, M. ; McNamara, J. D. ; Behrends, A. ; Bakin, A. ; Waag, A. / Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 7.
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