Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

M. A. Reshchikov; M. Foussekis; J. D. McNamara; A. Behrends; A. Bakin; A. Waag

doi:10.1063/1.3699312

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

M. A. Reshchikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag

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Abstract

The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn _Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90 was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn _Ga acceptors and free electrons were also estimated from the photoluminescence measurements.

Original language	English (US)
Article number	073106
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3699312
State	Published - Apr 1 2012
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn",

abstract = "The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90 was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn Ga acceptors and free electrons were also estimated from the photoluminescence measurements.",

author = "Reshchikov, {M. A.} and M. Foussekis and McNamara, {J. D.} and A. Behrends and A. Bakin and A. Waag",

note = "Funding Information: The work was supported by the BMBF under the project “Ephquam.” The authors also thank V. Avrutin and H. Morko{\c c} from VCU for assistance with the Hall effect measurements.",

year = "2012",

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language = "English (US)",

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T1 - Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

AU - Reshchikov, M. A.

AU - Foussekis, M.

AU - McNamara, J. D.

AU - Behrends, A.

AU - Bakin, A.

AU - Waag, A.

N1 - Funding Information: The work was supported by the BMBF under the project “Ephquam.” The authors also thank V. Avrutin and H. Morkoç from VCU for assistance with the Hall effect measurements.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90 was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn Ga acceptors and free electrons were also estimated from the photoluminescence measurements.

AB - The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90 was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn Ga acceptors and free electrons were also estimated from the photoluminescence measurements.

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JF - Journal of Applied Physics

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Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

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