Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

M. A. Reshchikov, J. D. McNamara, M. Toporkov, V. Avrutin, H. Morkoç, A. Usikov, H. Helava, Yu Makarov

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Abstract

Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL bands in this material are found. The capture coefficients for all the defects, except for the green luminescence (GL1) band, are independent of temperature. The electron-capture coefficient for the GL1 band significantly changes with temperature because the GL1 band is caused by an internal transition in the related defect, involving an excited state acting as a giant trap for electrons. By using the determined electron-capture coefficients, the concentration of free electrons can be found at different temperatures by a contactless method. A new classification system is suggested for defect-related PL bands in undoped GaN.

Original languageEnglish (US)
Article number37511
JournalScientific reports
Volume6
DOIs
StatePublished - Nov 30 2016

ASJC Scopus subject areas

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    Reshchikov, M. A., McNamara, J. D., Toporkov, M., Avrutin, V., Morkoç, H., Usikov, A., Helava, H., & Makarov, Y. (2016). Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence. Scientific reports, 6, [37511]. https://doi.org/10.1038/srep37511