Epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistors for UV detection and effect of hydrogen intercalation on device I-V characteristics

Venkata S.N. Chava, M. V.S. Chandrashekhar, Kevin M. Daniels, Bobby G. Barker, Andrew B. Greytak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wideband gap semiconductor materials such as SiC and GaN are popular for UV detection applications. Also, epitaxial growth of graphene on SiC is suitable for the development of large area electronic and optoelectronic devices based on EG/SiC junctions. Epitaxial graphene(EG) grown on SiC forms a Schottky junction with highly asymmetric barrier for both electrons and holes. We have previously reported a high gain bipolar photo-transistor for UV detector applications. In this present study, we report the current-voltage (I-V) and gain characteristics of these devices before and after hydrogen intercalation process step. It is observed that the gain has decreased after intercalation which is possibly due to reduced minority carrier injection efficiency. Additionally, the device I-V characteristics are measured under sub bandgap blue laser excitation and from these results, the UV-Visible rejection ratio is estimated to be about 4500.

Original languageEnglish (US)
Title of host publicationIEEE Sensors, SENSORS 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982875
DOIs
StatePublished - Jan 5 2017
Externally publishedYes
Event15th IEEE Sensors Conference, SENSORS 2016 - Orlando, United States
Duration: Oct 30 2016Nov 2 2016

Publication series

NameProceedings of IEEE Sensors
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Conference

Conference15th IEEE Sensors Conference, SENSORS 2016
CountryUnited States
CityOrlando
Period10/30/1611/2/16

Keywords

  • Epitaxial graphene(EG)
  • Photo-transistor
  • Silicon Carbide(SiC)
  • UV detector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Chava, V. S. N., Chandrashekhar, M. V. S., Daniels, K. M., Barker, B. G., & Greytak, A. B. (2017). Epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistors for UV detection and effect of hydrogen intercalation on device I-V characteristics. In IEEE Sensors, SENSORS 2016 - Proceedings [7808587] (Proceedings of IEEE Sensors). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSENS.2016.7808587