Green luminescence in Mg-doped GaN

M. A. Reshchikov, D. O. Demchenko, J. D. McNamara, S. Fernández-Garrido, R. Calarco

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the VN defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.

Original languageEnglish (US)
Article number035207
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number3
DOIs
StatePublished - Jul 21 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Green luminescence in Mg-doped GaN'. Together they form a unique fingerprint.

Cite this