Green luminescence in Mg-doped GaN

M. A. Reshchikov, D. O. Demchenko, Joy Dorene McNamara, S. Fernández-Garrido, R. Calarco

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the VN defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.

Original languageEnglish (US)
Article number035207
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number3
DOIs
StatePublished - Jul 21 2014

Fingerprint

Electron transitions
Vacancies
Luminescence
Photoluminescence
luminescence
Defects
Point defects
Conduction bands
Molecular beam epitaxy
Nitrogen
Electrons
photoluminescence
defects
point defects
conduction bands
molecular beam epitaxy
nitrogen
electrical resistivity
causes
electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Reshchikov, M. A., Demchenko, D. O., McNamara, J. D., Fernández-Garrido, S., & Calarco, R. (2014). Green luminescence in Mg-doped GaN. Physical Review B - Condensed Matter and Materials Physics, 90(3), [035207]. https://doi.org/10.1103/PhysRevB.90.035207

Green luminescence in Mg-doped GaN. / Reshchikov, M. A.; Demchenko, D. O.; McNamara, Joy Dorene; Fernández-Garrido, S.; Calarco, R.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 3, 035207, 21.07.2014.

Research output: Contribution to journalArticle

Reshchikov, MA, Demchenko, DO, McNamara, JD, Fernández-Garrido, S & Calarco, R 2014, 'Green luminescence in Mg-doped GaN', Physical Review B - Condensed Matter and Materials Physics, vol. 90, no. 3, 035207. https://doi.org/10.1103/PhysRevB.90.035207
Reshchikov MA, Demchenko DO, McNamara JD, Fernández-Garrido S, Calarco R. Green luminescence in Mg-doped GaN. Physical Review B - Condensed Matter and Materials Physics. 2014 Jul 21;90(3). 035207. https://doi.org/10.1103/PhysRevB.90.035207
Reshchikov, M. A. ; Demchenko, D. O. ; McNamara, Joy Dorene ; Fernández-Garrido, S. ; Calarco, R. / Green luminescence in Mg-doped GaN. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 90, No. 3.
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