Abstract
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the VN defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.
| Original language | English (US) |
|---|---|
| Article number | 035207 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 90 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jul 21 2014 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Green luminescence in Mg-doped GaN. / Reshchikov, M. A.; Demchenko, D. O.; McNamara, Joy Dorene; Fernández-Garrido, S.; Calarco, R.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 3, 035207, 21.07.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Green luminescence in Mg-doped GaN
AU - Reshchikov, M. A.
AU - Demchenko, D. O.
AU - McNamara, Joy Dorene
AU - Fernández-Garrido, S.
AU - Calarco, R.
PY - 2014/7/21
Y1 - 2014/7/21
N2 - A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the VN defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.
AB - A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the VN defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.
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U2 - 10.1103/PhysRevB.90.035207
DO - 10.1103/PhysRevB.90.035207
M3 - Article
VL - 90
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 3
M1 - 035207
ER -