High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

Venkata S.N. Chava, Bobby G. Barker, Anusha Balachandran, Asif Khan, G. Simin, Andrew B. Greytak, M. V.S. Chandrashekhar

Research output: Contribution to journalArticle

Abstract

We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270 nm:400 nm)>103. The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 × 1013 Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection.

Original languageEnglish (US)
Article number243504
JournalApplied Physics Letters
Volume111
Issue number24
DOIs
StatePublished - Dec 11 2017
Externally publishedYes

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phototransistors
electric contacts
graphene
accumulators
emitters
rejection
avalanches
photocurrents
photometers
flames
microscopy
scanning

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chava, V. S. N., Barker, B. G., Balachandran, A., Khan, A., Simin, G., Greytak, A. B., & Chandrashekhar, M. V. S. (2017). High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor. Applied Physics Letters, 111(24), [243504]. https://doi.org/10.1063/1.5009003

High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor. / Chava, Venkata S.N.; Barker, Bobby G.; Balachandran, Anusha; Khan, Asif; Simin, G.; Greytak, Andrew B.; Chandrashekhar, M. V.S.

In: Applied Physics Letters, Vol. 111, No. 24, 243504, 11.12.2017.

Research output: Contribution to journalArticle

Chava, VSN, Barker, BG, Balachandran, A, Khan, A, Simin, G, Greytak, AB & Chandrashekhar, MVS 2017, 'High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor', Applied Physics Letters, vol. 111, no. 24, 243504. https://doi.org/10.1063/1.5009003
Chava, Venkata S.N. ; Barker, Bobby G. ; Balachandran, Anusha ; Khan, Asif ; Simin, G. ; Greytak, Andrew B. ; Chandrashekhar, M. V.S. / High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor. In: Applied Physics Letters. 2017 ; Vol. 111, No. 24.
@article{b8469c7b49504fc08d346b298a075356,
title = "High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor",
abstract = "We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270 nm:400 nm)>103. The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 × 1013 Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection.",
author = "Chava, {Venkata S.N.} and Barker, {Bobby G.} and Anusha Balachandran and Asif Khan and G. Simin and Greytak, {Andrew B.} and Chandrashekhar, {M. V.S.}",
year = "2017",
month = "12",
day = "11",
doi = "10.1063/1.5009003",
language = "English (US)",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

AU - Chava, Venkata S.N.

AU - Barker, Bobby G.

AU - Balachandran, Anusha

AU - Khan, Asif

AU - Simin, G.

AU - Greytak, Andrew B.

AU - Chandrashekhar, M. V.S.

PY - 2017/12/11

Y1 - 2017/12/11

N2 - We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270 nm:400 nm)>103. The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 × 1013 Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection.

AB - We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with a Schottky (EG)/SiC junction grown using a SiF4 precursor. The phototransistor showed responsivity as high as 25 A/W at 250 nm in the Schottky emitter (SE) mode. The Schottky collector (SC) mode showed a responsivity of 17 A/W at 270 nm with a visible rejection (270 nm:400 nm)>103. The fastest response was seen in the SC-mode, with 10 ms turn-on and 47 ms turn-off, with a noise equivalent power of 2.3 fW at 20 Hz and a specific detectivity of 4.4 × 1013 Jones. The high responsivity is due to internal gain from bipolar action. We observe additional avalanche gain from the device periphery in the SC-mode by scanning photocurrent microscopy but not in the SE-mode. This high-performance visible-blind photodetector is attractive for advanced applications such as flame detection.

UR - http://www.scopus.com/inward/record.url?scp=85038558844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038558844&partnerID=8YFLogxK

U2 - 10.1063/1.5009003

DO - 10.1063/1.5009003

M3 - Article

AN - SCOPUS:85038558844

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 243504

ER -