High-energy recoil implantation of boron into silicon

Lin Shao, Xinming Lu, Jianyue Jin, Qinmian Li, Jiarui Liu, P. A.W. Van Der Heide, Wei Kan Chu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

One approach to fabricate shallow junctions made of B-doped Si is to deposit B on Si, followed by knocking the B into the Si substrate with Si ions. Conventional belief is that the higher the implantation energy, the deeper the recoil profile. While this is true for low-energy incident ions, we show here that the situation is reversed for incident Si ions of higher energy due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Our experiments show that 500 keV high-energy recoil implantation produces a shallower B profile than lower-energy implantation such as 10 and 50 keV. The secondary ion mass spectrometry analysis shows that the distribution of recoiled B atoms scattered by the energetic Si ions agrees with that calculated on the basis of interatomic potential suggested by W. D. Wilson, L. G. Haagmark, and J. P. Biersack [Phys. Rev. B 15, 2458 (1977)]. Sub-100 nm p+ /n junctions have been realized with a 500 keV Si ion beam.

Original languageEnglish (US)
Pages (from-to)3953-3955
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number26
DOIs
StatePublished - Jun 26 2000

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implantation
boron
silicon
energy
ions
profiles
p-n junctions
secondary ion mass spectrometry
projectiles
ion beams
deposits
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Shao, L., Lu, X., Jin, J., Li, Q., Liu, J., Van Der Heide, P. A. W., & Chu, W. K. (2000). High-energy recoil implantation of boron into silicon. Applied Physics Letters, 76(26), 3953-3955. https://doi.org/10.1063/1.126832

High-energy recoil implantation of boron into silicon. / Shao, Lin; Lu, Xinming; Jin, Jianyue; Li, Qinmian; Liu, Jiarui; Van Der Heide, P. A.W.; Chu, Wei Kan.

In: Applied Physics Letters, Vol. 76, No. 26, 26.06.2000, p. 3953-3955.

Research output: Contribution to journalArticle

Shao, L, Lu, X, Jin, J, Li, Q, Liu, J, Van Der Heide, PAW & Chu, WK 2000, 'High-energy recoil implantation of boron into silicon', Applied Physics Letters, vol. 76, no. 26, pp. 3953-3955. https://doi.org/10.1063/1.126832
Shao L, Lu X, Jin J, Li Q, Liu J, Van Der Heide PAW et al. High-energy recoil implantation of boron into silicon. Applied Physics Letters. 2000 Jun 26;76(26):3953-3955. https://doi.org/10.1063/1.126832
Shao, Lin ; Lu, Xinming ; Jin, Jianyue ; Li, Qinmian ; Liu, Jiarui ; Van Der Heide, P. A.W. ; Chu, Wei Kan. / High-energy recoil implantation of boron into silicon. In: Applied Physics Letters. 2000 ; Vol. 76, No. 26. pp. 3953-3955.
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