Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn

M. A. Reshchikov, J. D. Mcnamara, A. Behrends, M. S. Mohajerani, A. Bakin, A. Waag

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Photoluminescence (PL) from high-quality GaN codoped with silicon and zinc was investigated in detail. The internal quantum efficiency (IQE) of PL was determined from the analysis of the dependencies of the PL intensity on the excitation intensity and temperature, and the simulation of these dependencies with a phenomenological model based on rate equations. The model reproduces an important phenomenon: the quenching of a recombination channel with a high IQE causes a rise in efficiency of all the other PL bands. Quantitative analysis of this phenomenon allows one to determine reliably the absolute IQE of PL. The absolute IQE of the PL in GaN co-doped with Si and Zn exceeds 90%, with the largest contribution coming from the blue luminescence band associated with the ZnGa acceptor.

Original languageEnglish (US)
Pages (from-to)507-510
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number3
DOIs
StatePublished - Mar 1 2013
Externally publishedYes

Keywords

  • GaN
  • Photoluminescence
  • Quantum efficiency

ASJC Scopus subject areas

  • Condensed Matter Physics

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