Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn

M. A. Reshchikov, J. D. Mcnamara, A. Behrends, M. S. Mohajerani, A. Bakin, A. Waag

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn'. Together they form a unique fingerprint.

Physics & Astronomy