HVPE GaN with low concentration of point defects for power electronics

M. A. Reshchikov, Joy Dorene McNamara, A. Usikov, H. Helava, Y. Makarov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ~1017 cm-3. The concentrations of defects responsible for other defect- related PL bands rarely exceed 1015 cm-3.

Original languageEnglish (US)
Title of host publicationWide-Bandgap Materials for Solid-State Lighting and Power Electronics
EditorsG. Meneghesso, T. Takeuchi, R. Kaplar, B. Ozpineci
PublisherMaterials Research Society
Pages89-94
Number of pages6
ISBN (Electronic)9781510806160
DOIs
StatePublished - Jan 1 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1736
ISSN (Print)0272-9172

Other

Other2014 MRS Fall Meeting
CountryUnited States
CityBoston
Period11/30/1412/5/14

Fingerprint

Point defects
Power electronics
point defects
low concentrations
Photoluminescence
photoluminescence
electronics
Defects
defects
Aluminum Oxide
Sapphire
sapphire
excitation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Reshchikov, M. A., McNamara, J. D., Usikov, A., Helava, H., & Makarov, Y. (2015). HVPE GaN with low concentration of point defects for power electronics. In G. Meneghesso, T. Takeuchi, R. Kaplar, & B. Ozpineci (Eds.), Wide-Bandgap Materials for Solid-State Lighting and Power Electronics (pp. 89-94). (Materials Research Society Symposium Proceedings; Vol. 1736). Materials Research Society. https://doi.org/10.1557/opl.2015.140

HVPE GaN with low concentration of point defects for power electronics. / Reshchikov, M. A.; McNamara, Joy Dorene; Usikov, A.; Helava, H.; Makarov, Y.

Wide-Bandgap Materials for Solid-State Lighting and Power Electronics. ed. / G. Meneghesso; T. Takeuchi; R. Kaplar; B. Ozpineci. Materials Research Society, 2015. p. 89-94 (Materials Research Society Symposium Proceedings; Vol. 1736).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Reshchikov, MA, McNamara, JD, Usikov, A, Helava, H & Makarov, Y 2015, HVPE GaN with low concentration of point defects for power electronics. in G Meneghesso, T Takeuchi, R Kaplar & B Ozpineci (eds), Wide-Bandgap Materials for Solid-State Lighting and Power Electronics. Materials Research Society Symposium Proceedings, vol. 1736, Materials Research Society, pp. 89-94, 2014 MRS Fall Meeting, Boston, United States, 11/30/14. https://doi.org/10.1557/opl.2015.140
Reshchikov MA, McNamara JD, Usikov A, Helava H, Makarov Y. HVPE GaN with low concentration of point defects for power electronics. In Meneghesso G, Takeuchi T, Kaplar R, Ozpineci B, editors, Wide-Bandgap Materials for Solid-State Lighting and Power Electronics. Materials Research Society. 2015. p. 89-94. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2015.140
Reshchikov, M. A. ; McNamara, Joy Dorene ; Usikov, A. ; Helava, H. ; Makarov, Y. / HVPE GaN with low concentration of point defects for power electronics. Wide-Bandgap Materials for Solid-State Lighting and Power Electronics. editor / G. Meneghesso ; T. Takeuchi ; R. Kaplar ; B. Ozpineci. Materials Research Society, 2015. pp. 89-94 (Materials Research Society Symposium Proceedings).
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