HVPE GaN with low concentration of point defects for power electronics

M. A. Reshchikov, Joy Dorene McNamara, A. Usikov, H. Helava, Y. Makarov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ~1017 cm-3. The concentrations of defects responsible for other defect- related PL bands rarely exceed 1015 cm-3.

Original languageEnglish (US)
Title of host publicationWide-Bandgap Materials for Solid-State Lighting and Power Electronics
EditorsG. Meneghesso, T. Takeuchi, R. Kaplar, B. Ozpineci
PublisherMaterials Research Society
Pages89-94
Number of pages6
ISBN (Electronic)9781510806160
DOIs
Publication statusPublished - Jan 1 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1736
ISSN (Print)0272-9172

Other

Other2014 MRS Fall Meeting
CountryUnited States
CityBoston
Period11/30/1412/5/14

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Reshchikov, M. A., McNamara, J. D., Usikov, A., Helava, H., & Makarov, Y. (2015). HVPE GaN with low concentration of point defects for power electronics. In G. Meneghesso, T. Takeuchi, R. Kaplar, & B. Ozpineci (Eds.), Wide-Bandgap Materials for Solid-State Lighting and Power Electronics (pp. 89-94). (Materials Research Society Symposium Proceedings; Vol. 1736). Materials Research Society. https://doi.org/10.1557/opl.2015.140