Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

Jian Yue Jin, Jiarui Liu, Paul A.W. Van Der Heide, Wei Kan Chu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn -, n = 1-3) ion implantation with the same atomic boron dose and energy. This Bn - series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1 - implantation has less TED and less boron-interstitial clustering than B2 - and B3 - implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions.

Original languageEnglish (US)
Pages (from-to)574-576
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
DOIs
StatePublished - Jan 31 2000

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ion implantation
implantation
boron
damage
annealing
energy
interstitials
nuclear energy
secondary ion mass spectrometry
trapping
dosage
profiles
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation. / Jin, Jian Yue; Liu, Jiarui; Van Der Heide, Paul A.W.; Chu, Wei Kan.

In: Applied Physics Letters, Vol. 76, No. 5, 31.01.2000, p. 574-576.

Research output: Contribution to journalArticle

Jin, Jian Yue ; Liu, Jiarui ; Van Der Heide, Paul A.W. ; Chu, Wei Kan. / Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation. In: Applied Physics Letters. 2000 ; Vol. 76, No. 5. pp. 574-576.
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