Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

Jian Yue Jin, Jiarui Liu, Paul A.W. Van Der Heide, Wei Kan Chu

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Abstract

We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn-, n = 1-3) ion implantation with the same atomic boron dose and energy. This Bn- series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1- implantation has less TED and less boron-interstitial clustering than B2- and B3- implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions.

Original languageEnglish (US)
Pages (from-to)574-576
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
DOIs
Publication statusPublished - Jan 31 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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