Optical studies of semiconductor Quantum Dots

H. Yükselici, C. Allahverdi, A. Aşikoǧlu, H. Ünlü, A. Baysal, M. Çulha, R. Ince, A. Ince, M. Feeney, H. Athalin

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

Optical absorption (ABS), steady-state photoluminescence (PL), resonant Raman, and photoabsorption (PA) spectroscopies are employed to study quantumsize effects in II-VI semiconductor quantum dots (QDs) grown in glass samples. We observe a size-dependent shift in the energetic position of the first exciton peak and have examined the photoinduced evolution of the differential absorption spectra. The Raman shifts of the phonon modes are employed to monitor stoichiometric changes in the composition of the QDs during growth. Two sets of glass samples were prepared from color filters doped with CdSxSe1-xand ZnxCd1-xTe. We analyze the optical properties of QDs through the ABS, PL, resonant Raman, and PA spectroscopies. The glass samples were prepared from commercially available semiconductor doped filters by a two-step thermal treatment. The average size of QDs is estimated from the energetic position of the first exciton peak in the ABS spectrum. A calculation based on a quantized-state effective mass model in the strong confinement regime predicts that the average radius of QDs in the glass samples ranges from 2.9 to 4.9 nm for CdTe and from 2.2 to 9.3 nm for CdS0:08Se0:92. We have also studied the nonlinear optical properties of QDs by reviewing the results of size-dependent photoinduced modulations in the first exciton band of CdTe QDs studied by PA spectroscopy.

Original languageEnglish (US)
Title of host publicationLow Dimensional Semiconductor Structures
Subtitle of host publicationCharacterization, Modeling and Applications
PublisherSpringer Verlag
Pages101-117
Number of pages17
ISBN (Print)9783642284236
DOIs
StatePublished - 2013
Externally publishedYes

Publication series

NameNanoScience and Technology
Volume77
ISSN (Print)1434-4904

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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