Abstract
The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.
Original language | English (US) |
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Pages (from-to) | 422-426 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2002 |
Event | 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States Duration: Apr 22 2001 → Apr 26 2001 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering