Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing

Jian Yue Jin, Jinning Liu, Ukyo Jeong, Sandeep Mehta, Kevin Jones

Research output: Contribution to journalConference articlepeer-review

56 Scopus citations


The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.

Original languageEnglish (US)
Pages (from-to)422-426
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - Jan 1 2002
Event6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States
Duration: Apr 22 2001Apr 26 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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