Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing

Jian Yue Jin, Jinning Liu, Ukyo Jeong, Sandeep Mehta, Kevin Jones

Research output: Contribution to journalConference article

54 Citations (Scopus)

Abstract

The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.

Original languageEnglish (US)
Pages (from-to)422-426
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number1
DOIs
StatePublished - Jan 1 2002
Event6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States
Duration: Apr 22 2001Apr 26 2001

Fingerprint

p-n junctions
Boron
solid phases
Annealing
boron fluorides
boron
annealing
wafers
activation analysis
deactivation
secondary ion mass spectrometry
Secondary ion mass spectrometry
transmission electron microscopy
microstructure
Chemical activation
Doping (additives)
probes
defects
Transmission electron microscopy
Defects

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing. / Jin, Jian Yue; Liu, Jinning; Jeong, Ukyo; Mehta, Sandeep; Jones, Kevin.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 1, 01.01.2002, p. 422-426.

Research output: Contribution to journalConference article

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