Temperature-dependent Kelvin probe measurements of band bending in p-type GaN

M. Foussekis, Joy Dorene McNamara, A. A. Baski, M. A. Reshchikov

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.

Original languageEnglish (US)
Article number082104
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - Aug 20 2012

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probes
temperature
vapor phase epitaxy
hydrides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Foussekis, M., McNamara, J. D., Baski, A. A., & Reshchikov, M. A. (2012). Temperature-dependent Kelvin probe measurements of band bending in p-type GaN. Applied Physics Letters, 101(8), [082104]. https://doi.org/10.1063/1.4747203

Temperature-dependent Kelvin probe measurements of band bending in p-type GaN. / Foussekis, M.; McNamara, Joy Dorene; Baski, A. A.; Reshchikov, M. A.

In: Applied Physics Letters, Vol. 101, No. 8, 082104, 20.08.2012.

Research output: Contribution to journalArticle

Foussekis, M, McNamara, JD, Baski, AA & Reshchikov, MA 2012, 'Temperature-dependent Kelvin probe measurements of band bending in p-type GaN', Applied Physics Letters, vol. 101, no. 8, 082104. https://doi.org/10.1063/1.4747203
Foussekis, M. ; McNamara, Joy Dorene ; Baski, A. A. ; Reshchikov, M. A. / Temperature-dependent Kelvin probe measurements of band bending in p-type GaN. In: Applied Physics Letters. 2012 ; Vol. 101, No. 8.
@article{0e906d636e834dccae7954c3a7f4004d,
title = "Temperature-dependent Kelvin probe measurements of band bending in p-type GaN",
abstract = "The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.",
author = "M. Foussekis and McNamara, {Joy Dorene} and Baski, {A. A.} and Reshchikov, {M. A.}",
year = "2012",
month = "8",
day = "20",
doi = "10.1063/1.4747203",
language = "English (US)",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Temperature-dependent Kelvin probe measurements of band bending in p-type GaN

AU - Foussekis, M.

AU - McNamara, Joy Dorene

AU - Baski, A. A.

AU - Reshchikov, M. A.

PY - 2012/8/20

Y1 - 2012/8/20

N2 - The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.

AB - The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.

UR - http://www.scopus.com/inward/record.url?scp=84865485412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865485412&partnerID=8YFLogxK

U2 - 10.1063/1.4747203

DO - 10.1063/1.4747203

M3 - Article

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082104

ER -