Temperature-dependent Kelvin probe measurements of band bending in p-type GaN

M. Foussekis, J. D. McNamara, A. A. Baski, M. A. Reshchikov

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.

Original languageEnglish (US)
Article number082104
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - Aug 20 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Temperature-dependent Kelvin probe measurements of band bending in p-type GaN'. Together they form a unique fingerprint.

Cite this