Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K

Joy Dorene McNamara, A. A. Baski, M. A. Reshchikov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, we report on the effect of temperature on near-surface band bending and surface photovoltage (SPV) in GaN. Band bending and SPV during illumination and after switching the illumination off are calculated for n -type and p -type GaN by using a thermionic model. The temperature and temporal dependencies are compared with experimental data. We find that the thermionic model describes adequately the SPV values and its dynamics only at high temperatures. At temperatures below room temperature the observed SPV is much higher than predicted from the thermionic model, especially in the case of p -type GaN. This fact is explained by a significant shift of the quasi-Fermi level in p -type GaN under illumination.

Original languageEnglish (US)
Pages (from-to)726-729
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number3-4
DOIs
StatePublished - Jan 1 2014

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photovoltages
thermionics
probes
illumination
temperature
shift
room temperature

Keywords

  • Band bending
  • GaN
  • Photovoltage

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K. / McNamara, Joy Dorene; Baski, A. A.; Reshchikov, M. A.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 3-4, 01.01.2014, p. 726-729.

Research output: Contribution to journalArticle

McNamara, Joy Dorene ; Baski, A. A. ; Reshchikov, M. A. / Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2014 ; Vol. 11, No. 3-4. pp. 726-729.
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