Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN

M. A. Reshchikov, J. D. McNamara, S. Fernández-Garrido, R. Calarco

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN:Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.

Original languageEnglish (US)
Article number115205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number11
DOIs
StatePublished - Mar 13 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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