Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN

M. A. Reshchikov, Joy Dorene McNamara, S. Fernández-Garrido, R. Calarco

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN:Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.

Original languageEnglish (US)
Article number115205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number11
DOIs
StatePublished - Mar 13 2013

Fingerprint

Quenching
Photoluminescence
quenching
photoluminescence
Temperature
population inversion
Charge carriers
Luminescence
charge carriers
luminescence
Defects
temperature
Hot Temperature
defects
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN. / Reshchikov, M. A.; McNamara, Joy Dorene; Fernández-Garrido, S.; Calarco, R.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 11, 115205, 13.03.2013.

Research output: Contribution to journalArticle

Reshchikov, M. A. ; McNamara, Joy Dorene ; Fernández-Garrido, S. ; Calarco, R. / Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 87, No. 11.
@article{bc1d55a0f4bc4ba7b828d4fcc41be7ad,
title = "Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN",
abstract = "We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN:Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.",
author = "Reshchikov, {M. A.} and McNamara, {Joy Dorene} and S. Fern{\'a}ndez-Garrido and R. Calarco",
year = "2013",
month = "3",
day = "13",
doi = "10.1103/PhysRevB.87.115205",
language = "English (US)",
volume = "87",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN

AU - Reshchikov, M. A.

AU - McNamara, Joy Dorene

AU - Fernández-Garrido, S.

AU - Calarco, R.

PY - 2013/3/13

Y1 - 2013/3/13

N2 - We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN:Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.

AB - We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN:Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.

UR - http://www.scopus.com/inward/record.url?scp=84875326230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875326230&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.87.115205

DO - 10.1103/PhysRevB.87.115205

M3 - Article

VL - 87

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 11

M1 - 115205

ER -