Ultra-shallow junction formation via GeB-ion implantation of Si

X. Lu, L. Shao, JianYue Jin, Q. Li, I. Rusakova, Q. Y. Chen, J. Liu, W. K. Chu, P. Ling

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

GeB- Cluster ions have been used to effectively produce 0.65-2KeV boron for low energy ion implantation. We have generated the GeB- cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been made by the GeB- cluster ions implanting into Si substrates at 15keV, 1×1015/cm2 and 5keV, 5×1014. The junction depth as small as 37nm has been achieved by rapid thermal annealing of the 5 keV sample at 1000°C for 1 second. A two-step annealing was also performed to study the diffusion of B in the GeB- ion cluster implanted Si by annealing the 15 keV implanted sample at 550°C/300sec+1000°C/10sec. We found that the junction depth of the two-step annealed sample was only half of the one-step annealed sample. TEM (transmission electron microscopy) showed clear recrystallization of the amorphized layer with no observable residual defects. We briefly discussed the role of Ge in regards to reduction of the junction depth.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume610
StatePublished - Dec 1 2000
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Fingerprint

Ion implantation
ion implantation
Ions
annealing
ions
Annealing
Cesium
Boron
Rapid thermal annealing
Ion sources
cesium
negative ions
ion sources
Sputtering
boron
Negative ions
sputtering
Transmission electron microscopy
Defects
transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lu, X., Shao, L., Jin, J., Li, Q., Rusakova, I., Chen, Q. Y., ... Ling, P. (2000). Ultra-shallow junction formation via GeB-ion implantation of Si. Materials Research Society Symposium - Proceedings, 610.

Ultra-shallow junction formation via GeB-ion implantation of Si. / Lu, X.; Shao, L.; Jin, JianYue; Li, Q.; Rusakova, I.; Chen, Q. Y.; Liu, J.; Chu, W. K.; Ling, P.

In: Materials Research Society Symposium - Proceedings, Vol. 610, 01.12.2000.

Research output: Contribution to journalConference article

Lu, X, Shao, L, Jin, J, Li, Q, Rusakova, I, Chen, QY, Liu, J, Chu, WK & Ling, P 2000, 'Ultra-shallow junction formation via GeB-ion implantation of Si', Materials Research Society Symposium - Proceedings, vol. 610.
Lu, X. ; Shao, L. ; Jin, JianYue ; Li, Q. ; Rusakova, I. ; Chen, Q. Y. ; Liu, J. ; Chu, W. K. ; Ling, P. / Ultra-shallow junction formation via GeB-ion implantation of Si. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 610.
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AU - Shao, L.

AU - Jin, JianYue

AU - Li, Q.

AU - Rusakova, I.

AU - Chen, Q. Y.

AU - Liu, J.

AU - Chu, W. K.

AU - Ling, P.

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N2 - GeB- Cluster ions have been used to effectively produce 0.65-2KeV boron for low energy ion implantation. We have generated the GeB- cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been made by the GeB- cluster ions implanting into Si substrates at 15keV, 1×1015/cm2 and 5keV, 5×1014. The junction depth as small as 37nm has been achieved by rapid thermal annealing of the 5 keV sample at 1000°C for 1 second. A two-step annealing was also performed to study the diffusion of B in the GeB- ion cluster implanted Si by annealing the 15 keV implanted sample at 550°C/300sec+1000°C/10sec. We found that the junction depth of the two-step annealed sample was only half of the one-step annealed sample. TEM (transmission electron microscopy) showed clear recrystallization of the amorphized layer with no observable residual defects. We briefly discussed the role of Ge in regards to reduction of the junction depth.

AB - GeB- Cluster ions have been used to effectively produce 0.65-2KeV boron for low energy ion implantation. We have generated the GeB- cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been made by the GeB- cluster ions implanting into Si substrates at 15keV, 1×1015/cm2 and 5keV, 5×1014. The junction depth as small as 37nm has been achieved by rapid thermal annealing of the 5 keV sample at 1000°C for 1 second. A two-step annealing was also performed to study the diffusion of B in the GeB- ion cluster implanted Si by annealing the 15 keV implanted sample at 550°C/300sec+1000°C/10sec. We found that the junction depth of the two-step annealed sample was only half of the one-step annealed sample. TEM (transmission electron microscopy) showed clear recrystallization of the amorphized layer with no observable residual defects. We briefly discussed the role of Ge in regards to reduction of the junction depth.

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