Vacancy enhanced boron activation during room temperature implantation and low temperature annealing

Jian Yue Jin, Irene Rusakova, Qinmian Li, Jiarui Liu, Wei Kan Chu

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Low temperature annealing combined with pre-damage (or pre-amorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 Ω/sq. using 20 keV 4×1014 at./cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550°C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancy-rich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Original languageEnglish (US)
Pages (from-to)B5.6.1-B5.6.6
JournalMaterials Research Society Symposium - Proceedings
Volume610
StatePublished - 2000
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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