Vacancy enhanced boron activation during room temperature implantation and low temperature annealing

Jian Yue Jin, Irene Rusakova, Qinmian Li, Jiarui Liu, Wei Kan Chu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low temperature annealing combined with pre-damage (or pre-amorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 Ω/sq. using 20 keV 4×1014 at./cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550°C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancy-rich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume610
StatePublished - 2000
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Fingerprint

Boron
Ion implantation
Vacancies
implantation
boron
Chemical activation
activation
Annealing
annealing
damage
room temperature
Temperature
temperature
Amorphization
Sheet resistance
profiles
p-n junctions
interstitials

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Vacancy enhanced boron activation during room temperature implantation and low temperature annealing. / Jin, Jian Yue; Rusakova, Irene; Li, Qinmian; Liu, Jiarui; Chu, Wei Kan.

In: Materials Research Society Symposium - Proceedings, Vol. 610, 2000.

Research output: Contribution to journalArticle

Jin, Jian Yue ; Rusakova, Irene ; Li, Qinmian ; Liu, Jiarui ; Chu, Wei Kan. / Vacancy enhanced boron activation during room temperature implantation and low temperature annealing. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 610.
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