Zero-phonon line and fine structure of the yellow luminescence band in GaN

M. A. Reshchikov, Joy Dorene McNamara, F. Zhang, M. Monavarian, A. Usikov, H. Helava, Yu Makarov, H. Morkoç

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero-phonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.

Original languageEnglish (US)
Article number035201
JournalPhysical Review B
Volume94
Issue number3
DOIs
StatePublished - Jul 5 2016

Fingerprint

Luminescence
fine structure
luminescence
Defects
electron transitions
defects
Electron transitions
Phonons
Conduction bands
replicas
Photoluminescence
conduction bands
phonons
photoluminescence
Temperature
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Reshchikov, M. A., McNamara, J. D., Zhang, F., Monavarian, M., Usikov, A., Helava, H., ... Morkoç, H. (2016). Zero-phonon line and fine structure of the yellow luminescence band in GaN. Physical Review B, 94(3), [035201]. https://doi.org/10.1103/PhysRevB.94.035201

Zero-phonon line and fine structure of the yellow luminescence band in GaN. / Reshchikov, M. A.; McNamara, Joy Dorene; Zhang, F.; Monavarian, M.; Usikov, A.; Helava, H.; Makarov, Yu; Morkoç, H.

In: Physical Review B, Vol. 94, No. 3, 035201, 05.07.2016.

Research output: Contribution to journalArticle

Reshchikov, MA, McNamara, JD, Zhang, F, Monavarian, M, Usikov, A, Helava, H, Makarov, Y & Morkoç, H 2016, 'Zero-phonon line and fine structure of the yellow luminescence band in GaN', Physical Review B, vol. 94, no. 3, 035201. https://doi.org/10.1103/PhysRevB.94.035201
Reshchikov MA, McNamara JD, Zhang F, Monavarian M, Usikov A, Helava H et al. Zero-phonon line and fine structure of the yellow luminescence band in GaN. Physical Review B. 2016 Jul 5;94(3). 035201. https://doi.org/10.1103/PhysRevB.94.035201
Reshchikov, M. A. ; McNamara, Joy Dorene ; Zhang, F. ; Monavarian, M. ; Usikov, A. ; Helava, H. ; Makarov, Yu ; Morkoç, H. / Zero-phonon line and fine structure of the yellow luminescence band in GaN. In: Physical Review B. 2016 ; Vol. 94, No. 3.
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