Zero-phonon line and fine structure of the yellow luminescence band in GaN

M. A. Reshchikov, Joy Dorene McNamara, F. Zhang, M. Monavarian, A. Usikov, H. Helava, Yu Makarov, H. Morkoç

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26 Scopus citations

Abstract

The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zero-phonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.

Original languageEnglish (US)
Article number035201
JournalPhysical Review B
Volume94
Issue number3
DOIs
StatePublished - Jul 5 2016

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Reshchikov, M. A., McNamara, J. D., Zhang, F., Monavarian, M., Usikov, A., Helava, H., Makarov, Y., & Morkoç, H. (2016). Zero-phonon line and fine structure of the yellow luminescence band in GaN. Physical Review B, 94(3), [035201]. https://doi.org/10.1103/PhysRevB.94.035201